VS-GB50LA120UX www.vishay.com vishay semiconductors revision: 30-jul-13 1 document number: 93102 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 "low side chopper" igbt sot-227 (ultrafast igbt), 50 a features ? npt generation v igbt technology ? square rbsoa ?hexfred ? clamping diode ?positive v ce(on) temperature coefficient ? fully isolated package ? speed 8 khz to 60 khz ? very low internal inductance ( ? 5 nh typical) ? industry standard outline ? ul approved file e78996 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 benefits ? designed for increased operating efficiency in power conversion: ups, smps, welding, induction heating ? easy to assemble and parallel ? direct mounting on heatsink ? plug-in compatible with other sot-227 packages ? low emi, requir es less snubbing product summary v ces 1200 v i c dc 50 a at 92 c v ce(on) typical at 50 a, 25 c 3.22 v package sot-227 circuit chopper low side switch s ot-227 absolute maximum ratings parameter symbol test conditions max. units collector to em itter voltage v ces 1200 v continuous coll ector current i c t c = 25 c 84 a t c = 80 c 57 pulsed collector current i cm 150 clamped inductive load current i lm 150 diode continuous forward current i f t c = 25 c 76 t c = 80 c 52 gate to emi tter voltage v ge 20 v power dissipa tion, igbt p d t c = 25 c 431 w t c = 80 c 242 power dissipation, diode p d t c = 25 c 278 t c = 80 c 156 rms isolation voltage v isol any terminal to case, t = 1 min 2500 v
VS-GB50LA120UX www.vishay.com vishay semiconductors revision: 30-jul-13 2 document number: 93102 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units collector to em itter breakdown voltage v br(ces) v ge = 0 v, i c = 1 ma 1200 - - v collector to em itter voltage v ce(on) v ge = 15 v, i c = 25 a - 2.46 - v ge = 15 v, i c = 50 a - 3.22 2.80 v ge = 15 v, i c = 25 a, t j = 125 c - 2.84 3.60 v ge = 15 v, i c = 50 a, t j = 125 c - 3.78 3.00 gate threshold voltage v ge(th) v ce = v ge , i c = 500 a 4 5 4 temperature coefficient of ? threshold voltage v ge(th) / ? t j v ce = v ge , i c = 1 ma (25 c to 125 c) - - 10 - mv/c collector to emitter leakage current i ces v ge = 0 v, v ce = 1200 v - 6 50 a v ge = 0 v, v ce = 1200 v, t j = 125 c - 0.7 2.0 ma diode reverse breakdown voltage v br i r = 1 ma 1200 - - v diode forward voltage drop v fm i c = 25 a, v ge = 0 v - 1.99 2.42 v i c = 50 a, v ge = 0 v - 2.53 3.00 i c = 25 a, v ge = 0 v, t j = 125 c - 1.96 2.30 i c = 50 a, v ge = 0 v, t j = 125 c - 2.66 3.08 diode reverse leakage current i rm v r = v r rated - 4 50 a t j = 125 c, v r = v r rated - 0.6 3.0 ma gate to emitter leakage current i ges v ge = 20 v - - 200 na switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units total gate charge (turn-on) q g i c = 50 a, v cc = 600 v, v ge = 15 v - 400 - nc gate to emitter charge (turn-on) q ge -43- gate to collector charge (turn-on) q gc - 187 - turn-on switching loss e on i c = 50 a, v cc = 600 v, v ge = 15 v, r g = 5 ??? l = 500 h, t j = 25 c energy losses include tail and diode recovery (see fig. 18) -2.72- mj turn-off switching loss e off -1.11- total switching loss e tot -3.83- turn-on switching loss e on i c = 50 a, v cc = 600 v, v ge = 15 v, r g = 5 ?? ? l = 500 h, t j = 125 c -3.94- turn-off switching loss e off -2.31- total switching loss e tot -6.25- turn-on delay time t d(on) - 191 - ns rise time t r -53- turn-off delay time t d(off) - 223 - fall time t f - 143 - reverse bias safe operating area rbsoa t j = 150 c, i c = 150 a, r g = 22 ??? v ge = 15 v to 0 v, v cc = 900 v, ? v p = 1200 v fullsquare diode reverse recovery time t rr i f = 50 a, di f /dt = 200 a/s, v r = 200 v - 129 161 ns diode peak reverse current i rr -1114a diode recovery charge q rr - 700 1046 nc diode reverse recovery time t rr i f = 50 a, di f /dt = 200 a/s, ? v r = 200 v, t j = 125 c - 208 257 ns diode peak reverse current i rr -1721a diode recovery charge q rr - 1768 2698 nc
VS-GB50LA120UX www.vishay.com vishay semiconductors revision: 30-jul-13 3 document number: 93102 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum dc igbt collector current vs. case temperature fig. 2 - igbt reverse bias soa t j = 150 c, v ge = 15 v fig. 3 - typical igbt collector current characteristics fig. 4 - typical igbt zero gate voltage collector current thermal and mechanical specifications parameter symbol min. typ. max. units junction and storage temperature range t j , t stg - 40 - 150 c junction to case igbt r thjc - - 0.29 c/w diode - - 0.45 case to heatsink r thcs flat, greased surface - 0.05 - weight -30-g mounting torque --1.3nm case style sot-227 allowable case temperature (c) i c - continuous collector current (a) 0 102030405060708090 0 160 100 120 140 20 40 60 80 i c (a) v ce (v) 1 10 100 1000 10 000 0.01 0.1 1 1000 10 100 i c (a) v ce (v) 024 8 13 6 57 0 200 25 50 100 75 150 125 175 t j = 125 c t j = 25 c i ces (ma) v ces (v) 100 300 500 700 900 1100 0.0001 10 1 0.01 0.1 0.001 t j = 125 c t j = 25 c
VS-GB50LA120UX www.vishay.com vishay semiconductors revision: 30-jul-13 4 document number: 93102 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical igbt threshold voltage fig. 6 - typical igbt collector to emitter voltage vs. junction temperature, v ge = 15 v fig. 7 - maximum dc forward current vs. case temperature fig. 8 - typical diode forward characteristics fig. 9 - typical igbt energy loss vs. i c t j = 125 c, l = 500 h, v cc = 600 v, r g = 5 ? , v ge = 15 v fig. 10 - typical igbt switching time vs. i c t j = 125 c, l = 500 h, v cc = 600 v, r g = 5 ? , v ge = 15 v v geth (v) i c (ma) 0.0002 0.0004 0.0006 0.0008 0.001 3.0 5.5 4.0 4.5 5.0 3.5 t j = 25 c t j = 125 c v ce (v) t j (c) 10 50 90 30 70 130 110 150 2 6 4 5 3 100 a 50 a 25 a allowable case temperature (c) i f - continuous forward current (a) 010 30 50 20 40 60 70 80 0 160 100 120 140 20 40 60 80 i f (a) v fm (v) 01 3 2 456 0 200 25 75 100 150 125 175 50 t j = 125 c t j = 25 c energy (mj) i c (a) 10 20 30 40 50 0 4 2 3 1 e off e on switching time (ns) i c (a) 010 50 30 40 20 60 10 1000 100 t d(off) t d(on) t f t r
VS-GB50LA120UX www.vishay.com vishay semiconductors revision: 30-jul-13 5 document number: 93102 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 11 - typical igbt energy loss vs. r g t j = 125 c, i c = 50 a, l = 500 h, v cc = 600 v, v ge = 15 v fig. 12 - typical igbt switching time vs. r g t j = 125 c, l = 500 h, v cc = 600 v, i c = 50 a, v ge = 15 v fig. 13 - typical t rr diode vs. di f /dt v r = 200 v, i f = 50 a fig. 14 - typical i rr diode vs. di f /dt v r = 200 v, i f = 50 a fig. 15 - typical q rr diode vs. di f /dt, v r = 200 v, i f = 50 a energy (mj) r g ( ) 0 1020304050 0 12 6 10 8 4 2 e on e off switching time (ns) r g ( ) 02030 10 40 50 10 100 1000 t d(on) t d(off) t f t r t rr (ns) di f /dt (a/s) 100 1000 70 250 110 150 190 210 230 90 130 170 t j = 125 c t j = 25 c i rr (a) di f /dt (a/s) 100 1000 0 40 10 20 30 35 5 15 25 t j = 125 c t j = 25 c q rr (nc) di f /dt (a/s) 100 1000 400 2650 900 1400 1900 2400 2150 650 1150 1650 t j = 125 c t j = 25 c
VS-GB50LA120UX www.vishay.com vishay semiconductors revision: 30-jul-13 6 document number: 93102 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 16 - maximum thermal impedance z thjc characteristics (igbt) fig. 17 - maximum thermal impedance z thjc characteristics (diode) 0.001 0.1 0.01 1 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance junction to case (c/w) 10 1 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc 0.001 0.1 0.01 1 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance junction to case (c/w) 10 1 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc
VS-GB50LA120UX www.vishay.com vishay semiconductors revision: 30-jul-13 7 document number: 93102 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 18a - clamped inductive load test circuit fig. 18b - pulsed collector current test circuit fig. 19a - switching loss test circuit fig. 19b - switching loss waveforms test circuit * driver same type as d.u.t.; v c = 80 % of v ce(max) * note: due to the 50 v power supply, pulse width and inductor will increase to obtain id 50 v 1000 v d.u.t. l v c * 2 1 r g v cc d.u.t. r = v cc i cm + - l diode clamp/ d.u.t. d.u.t./ driver - 5 v + - r g v cc + - t = 5 s t d(on) t f t r 90 % t d(off) 10 % 90 % 10 % 5 % v c i c e on e off e ts = (e on + e off ) 1 2 3
VS-GB50LA120UX www.vishay.com vishay semiconductors revision: 30-jul-13 8 document number: 93102 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table circuit configuration links to related documents dimensions www.vishay.com/doc?95036 packaging information www.vishay.com/doc?95037 - insulated gate bipolar transistor (igbt) - b = igbt generation 5 - current rating (50 = 50 a) - circuit configuration (l = low side chopper) - package indicator (a = sot-227) - voltage rating (120 = 1200 v) - x = f/w hexfred ? diode - speed/type (u = ultrafast igbt) device code g b 50 l a 120 u x 5 1 3 2 4 6 7 8 - vishay semiconductors product 9 vs- 2 3 4 5 6 8 9 7 1 3 2 4 1
document number: 95036 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 28-aug-07 1 sot-227 outline dimensions vishay semiconductors dimensions in millimeters (inches) notes ? dimensioning and toleranc ing per ansi y14.5m-1982 ? controlling dime nsion: millimeter 38.30 (1.508) 37.80 (1.488) -a- 4 12 3 12.50 (0.492) 7.50 (0.295) ? 4.40 (0.173) ? 4.20 (0.165) 30.20 (1.189) 29.80 (1.173) 15.00 (0.590) 6.25 (0.246) 25.70 (1.012) 25.20 (0.992) -b- r full chamfer 2.00 (0.079) x 45 2.10 (0.082) 1.90 (0.075) 8.10 (0.319) 7.70 (0.303) 4 x 2.10 (0.082) 1.90 (0.075) -c- 0.12 (0.005) 12.30 (0.484) 11.80 (0.464) mmm 0.25 (0.010) ca b 4 x m4 nuts
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